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NP6661BQR |
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| Part Number | NP6661BQR |
| Manufacturer | natlinear |
| Description | Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Chan. |
| Features | N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating Application N-CH P-CH Marking and pin assignment PDFN3×3-8L （Top View） S1 1 G1 2 S2 3 G2 4 NP6661B XXXX 8 D1 7 D1 6 D2 5 D2 Pch+Nch Complementary MOSFET for DC-FAN H-Bridge application HF Pb Ordering Information Part Number NP6661BQR-G Storage Tempera. |
| Datasheet |
 NP6661BQR Data Sheet
PDF 557.78KB |
| Distributor | Stock | Price | Buy |
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Desde 2024. D4U Semiconductor.
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