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P-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 x 1.48 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • High-side loadswitch • Swi |
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nexperia |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 x 0.78 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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nexperia |
P-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package 0.78 x 0.78 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • High-side loadswitch • Swit |
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nexperia |
Common Drain N-channel Trench MOSFET and benefits • Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications • Loadswitch • Ba |
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nexperia |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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nexperia |
N-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • High-speed line driver • Low-side load switch • Switching circuits |
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nexperia |
complementary N/P-channel Trench MOSFET and benefits • Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. A |
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P-channel MOSFET and benefits • Trench MOSFET technology • NPN transistor built-in bias resistors • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction 3. Applications • Charging switch for portable |
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nexperia |
P-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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nexperia |
N-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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nexperia |
P-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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nexperia |
N-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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nexperia |
P-channel MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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nexperia |
N/P-channel MOSFET and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to- |
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nexperia |
N/P-channel MOSFET and benefits • Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. A |
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nexperia |
N/P-channel MOSFET and benefits • Low leakage current • Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) prote |
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Desde 2024. D4U Semiconductor.
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