PMCM6501UNE nexperia N-channel Trench MOSFET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

PMCM6501UNE

nexperia
PMCM6501UNE
PMCM6501UNE PMCM6501UNE
zoom Click to view a larger image
Part Number PMCM6501UNE
Manufacturer nexperia (https://www.nexperia.com/)
Description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm...
Features
• Low threshold voltage
• Ultra small package: 0.98 × 1.48 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 20 V -8 - 8 V [1] - - 8.7 A...

Document Datasheet PMCM6501UNE Data Sheet
PDF 378.35KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 PMCM6501UPE
nexperia
P-channel Trench MOSFET Datasheet
2 PMCM6501VNE
NXP
N-channel Trench MOSFET Datasheet
3 PMCM6501VNE
nexperia
N-channel MOSFET Datasheet
4 PMCM6501VPE
NXP
P-channel Trench MOSFET Datasheet
5 PMCM6501VPE
nexperia
P-channel MOSFET Datasheet
6 PMCM650CUNE
nexperia
Common Drain N-channel Trench MOSFET Datasheet
More datasheet from nexperia
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad