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| Part Number | PMCM6501VNE |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMCM6501VNE |
| Manufacturer | nexperia |
| Title | N-channel MOSFET |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protec. |
| Features |
and benefits
• Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain c. |
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Desde 2024. D4U Semiconductor.
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