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PMCM6501UPE |
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| Part Number | PMCM6501UPE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm... |
| Features |
• Low threshold voltage • Ultra small package: 0.98 x 1.48 x 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3 A; Tj = 25 °C Min Typ Max Unit - - -20 V -8 - 8 V [1] - ... |
| Document |
 PMCM6501UPE Data Sheet
PDF 372.94KB |
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| 1 | PMCM6501UNE |
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Desde 2024. D4U Semiconductor.
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