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PMCXB1000UE |
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| Part Number | PMCXB1000UE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2.... |
| Features |
• Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Level shifter • Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 590 mA; Tj = 25 °C resistance TR2 (P-channel), Static characteristics ... |
| Document |
 PMCXB1000UE Data Sheet
PDF 775.81KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | PMCXB900UE |
NXP |
N/P-channel Trench MOSFET |
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| 2 | PMCXB900UE |
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complementary N/P-channel Trench MOSFET |
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| 3 | PMCXB900UEL |
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N/P-channel MOSFET |
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| 4 | PMC100 |
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PMCxx-xx Unit type |
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| 5 | PMC127B-1R0M-N |
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DIP Power Inductors |
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| 6 | PMC127B-1R5M-N |
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DIP Power Inductors |
|
Desde 2024. D4U Semiconductor.
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