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| Part Number | PMCXB900UE |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PMCXB900UE |
| Manufacturer | nexperia |
| Title | complementary N/P-channel Trench MOSFET |
| Description | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Very low threshold voltage for portable applicat. |
| Features |
and benefits
• Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.7 V • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • Relay driver • High-speed line driver • Level shifter • Power management in battery-driven portables 4. Quick reference data Table 1. . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMCXB900UEL |
nexperia |
N/P-channel MOSFET |
|
| 2 | PMCXB1000UE |
nexperia |
N/P-channel MOSFET |
|
| 3 | PMC100 |
Cosel |
PMCxx-xx Unit type |
|
| 4 | PMC127B-1R0M-N |
YAGEO |
DIP Power Inductors |
|
| 5 | PMC127B-1R5M-N |
YAGEO |
DIP Power Inductors |
|
| 6 | PMC127B-2R2M-N |
YAGEO |
DIP Power Inductors |
|
| 7 | PMC127B-3R3M-N |
YAGEO |
DIP Power Inductors |
|
| 8 | PMC127B-R60M-N |
YAGEO |
DIP Power Inductors |
|
| 9 | PMC129B-1R2M-N |
YAGEO |
DIP Power Inductors |
|
| 10 | PMC129B-1R5M-N |
YAGEO |
DIP Power Inductors |
|
Desde 2024. D4U Semiconductor.
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