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PMCPB5530X |
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| Part Number | PMCPB5530X |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technol... |
| Features |
Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.5 V; ID = 3 A; Tj = 25 °C resistance - ... |
| Document |
 PMCPB5530X Data Sheet
PDF 1.85MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMCPB5530X |
NXP Semiconductors |
MOSFET |
|
| 2 | PMC100 |
Cosel |
PMCxx-xx Unit type |
|
| 3 | PMC127B-1R0M-N |
YAGEO |
DIP Power Inductors |
|
| 4 | PMC127B-1R5M-N |
YAGEO |
DIP Power Inductors |
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| 5 | PMC127B-2R2M-N |
YAGEO |
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| 6 | PMC127B-3R3M-N |
YAGEO |
DIP Power Inductors |
|
Desde 2024. D4U Semiconductor.
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