PMCM650CUNE |
Part Number | PMCM650CUNE |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 1.2 Features and benefits • Common-drain ... |
Features |
• Common-drain type for bi-directional current flow • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 1.3 Applications • Loadswitch • Battery Protection • Battery Management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VSS source-source voltage VGS gate-source voltage IS source current Static characteristics RSSon source-source on-state resistance Conditions Tj = 25 °C Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s VGS = 4.5 V; IS = 3 A; Tj = 25 °C [1] Min Typ --8 -- - 40... |
Document |
PMCM650CUNE Data Sheet
PDF 393.68KB |
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