Toshiba HN4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HN4B101J	Toshiba	Silicon NPN/PNP Epitaxial Type Transistor ector (NPN) 5. Collector (PNP) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Collector power dissipation (DC) Single-device operation PC (Note 2) 0.55 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150
2	HN4D01JU	Toshiba	Silicon Epitaxial Planar Type Diode te reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total
3	HN4C05JU	Toshiba	Multi Chip Discrete Device responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss o
4	HN4A08J	Toshiba	Silicon PNP Epitaxial Type Transistor ditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Semiconductor Reliab
5	HN4B01JE	Toshiba	Silicon NPN/PNP Epitaxial Type Transistor -emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −50 −50 −5 −150 −30 Unit 52 V V V mA Equivalent Circuit (Top View) mA 5 4 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Q1 Q2
6	HN4K03JU	Toshiba	Silicon N-Channel MOSFET iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating St
7	HN4G01J	Toshiba Semiconductor	Multi Chip Discrece Device Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2Common) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 300 1
8	HN4B102J	Toshiba	Silicon PNP/NPN Transistor −1.8 −8.0 60 30 7 2.0 8.0 −0.5 0.5 PC (Note 2) 1.1 PC (Note 2) Tj Tstg 0.75 150 −55 to 150 Unit V V V A A W W °C °C 1. Base (Q1 PNP) 2. Emitter (Q1 PNP/Q2 NPN) 3. Base (Q2 NPN) 4. Collector (Q2 NPN) 5. Collector (Q1 PNP) JEDEC ― JEIT
9	HN4D02JU	Toshiba	Silicon Epitaxial Planar Type Diode rrent/voltage, etc.) are within the absolute maximum JEITA ratings. Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA ― 2-2L1S Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) a
10	HN4C51J	Toshiba	Silicon NPN Epitaxial Type Transistor product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
11	HN4C06J	Toshiba	Silicon NPN Epitaxial Type Transistor n the Weight: 0.014g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
12	HN4B06J	Toshiba	Silicon NPN/PNP Epitaxial Type Transistor nt Base current Symbol VCBO VCEO VEBO IC IB Rating Unit 120 V 120 V 5 V 100 mA 20 mA Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C) 45 Equivalent Circuit (Top View) 5 4 Characteristic Symbol Rating Unit Q1 Q2 Collector pow
13	HN4A51J	Toshiba	Silicon PNP Epitaxial Type Transistor use this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
14	HN4A56JU	Toshiba	Silicon PNP Epitaxial Type Transistor e, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upo
15	HN4A06J	Toshiba	Silicon PNP Epitaxial Type Transistor n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3L1A Weight: 0.014g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Rel