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HN4K03JU |
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| Part Number | HN4K03JU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN4K03JU HN4K03JU High Speed Switching Applications Analog Switch Applications Unit: mm z High input impedance z Low gate threshold volta... |
| Features |
iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1997-02
1
2014-03-01
HN4K03JU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output ... |
| Document |
 HN4K03JU Data Sheet
PDF 335.07KB |
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