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HN4B101J |
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| Part Number | HN4B101J |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) HN4B101J MOS Gate Drive Applications Switching Applications • Small footprint due to a small and thin package • High DC curr... |
| Features |
ector (NPN) 5. Collector (PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Collector power dissipation (DC)
Single-device operation
PC (Note 2)
0.55
W
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produ... |
| Document |
 HN4B101J Data Sheet
PDF 250.38KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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