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HN4B01JE Silicon NPN/PNP Epitaxial Type Transistor Datasheet


HN4B01JE

Toshiba
HN4B01JE
Part Number HN4B01JE
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT Vceo=-50V Vceo=50V
Description HN4B01JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN4B01JE Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE...
Features -emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −50 −50 −5 −150 −30 Unit 52 V V V mA Equivalent Circuit (Top View) mA 5 4 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Q1 Q2 Characteristic Symbol Rating Unit Collector power dissipation Junction temperature PC* 100 mW Tj 150 °C 123 Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to dec...

Document Datasheet HN4B01JE datasheet pdf (339.96KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 3870 In Stock
Price
1 units: 0.36 USD
10 units: 0.251 USD
100 units: 0.104 USD
1000 units: 0.065 USD
BuyNow BuyNow Buy Now (Manufacturer a Toshiba America Electronic Components HN4B01JE(TE85L,F))



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