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HN4B06J Silicon NPN/PNP Epitaxial Type Transistor Datasheet


HN4B06J

Toshiba
HN4B06J

Part Number HN4B06J
Manufacturer Toshiba (https://www.toshiba.com/)
Description HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE ...
Features nt Base current Symbol VCBO VCEO VEBO IC IB Rating Unit 120 V 120 V 5 V 100 mA 20 mA Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C) 45 Equivalent Circuit (Top View) 5 4 Characteristic Symbol Rating Unit Q1 Q2 Collector power dissipation PC* 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C 12 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...

Document Datasheet HN4B06J datasheet pdf (545.17KB)



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