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HN4A06J |
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| Part Number | HN4A06J |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excel... |
| Features |
n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current Emitter cu... |
| Document |
 HN4A06J Data Sheet
PDF 313.22KB |
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