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HN4A08J Silicon PNP Epitaxial Type Transistor Datasheet


HN4A08J

Toshiba
HN4A08J

Part Number HN4A08J
Manufacturer Toshiba (https://www.toshiba.com/)
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage : VCE(sat) = −0.4V (max) (IC = −500mA , IB = −20mA) Absolute Maximum Rati...
Features ditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Collector cut-off current Emitter cut-of...

Document Datasheet HN4A08J datasheet pdf (223.97KB)



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