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HN4A56JU Silicon PNP Epitaxial Type Transistor Datasheet


HN4A56JU

Toshiba
HN4A56JU
Part Number HN4A56JU
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A56JU HN4A56JU Audio Frequency General Purpose Amplifier Applications Unit: mm z Small Package (Dual Type) z High Voltage and High Current : VCEO= −50V, IC = −150mA (max) z High hFE z Excellent hFE Linearity : hFE (IC = −0.1mA) / hFE...
Features e, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating: Power dissipation per element should not exceed 130mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteri...

Document Datasheet HN4A56JU datasheet pdf (218.15KB)
Distributor Distributor
Mouser Electronics
All other distributors
Stock 456 In Stock
Price
1 units: 0.35 USD
10 units: 0.239 USD
100 units: 0.117 USD
1000 units: 0.068 USD
3000 units: 0.058 USD
9000 units: 0.046 USD
24000 units: 0.043 USD
45000 units: 0.04 USD
99000 units: 0.035 USD
BuyNow BuyNow Buy Now (Manufacturer a Toshiba America Electronic Components HN4A56JU(TE85L,F))



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