HN4A06J Silicon PNP Epitaxial Type Transistor Datasheet


Part Number HN4A06J
Manufacturer Toshiba (https://www.toshiba.com/)
Title Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J HN4A06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Unit: mm Absolute Maximum R...
Features n if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3L1A Weight: 0.014g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristic Collector cut-off current Emitter cu...

Document Datasheet HN4A06J datasheet pdf (313.22KB)
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Stock 2861 In Stock
1 units: 0.4 USD
10 units: 0.309 USD
100 units: 0.186 USD
1000 units: 0.121 USD
3000 units: 0.102 USD
9000 units: 0.097 USD
24000 units: 0.093 USD
45000 units: 0.09 USD
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