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HN4D01JU |
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| Part Number | HN4D01JU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ... |
| Features |
te reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5 ** :Total rating
JEDEC
―
EIAJ
―
TOSHIBA
―
Weight: 0.0062 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) VF (2) VF (3) IR (1) IR (2)
CT trr
Test Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
―... |
| Document |
 HN4D01JU Data Sheet
PDF 217.52KB |
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Desde 2024. D4U Semiconductor.
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