HN4C06J |
Part Number | HN4C06J |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excell... |
Features |
n the
Weight: 0.014g(Typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Symbol
Test Circ... |
Document |
HN4C06J Data Sheet
PDF 338.37KB |
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