Toshiba 2N4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N4126	Toshiba	Silicon PNP Transistor . Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V . Low Saturation Voltage •' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ v C B=-5V . Complementary to 2N4124 MAXIMU
2	2N4123	Toshiba	Silicon NPN Transistor . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance • • Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=2
3	2N4400	Toshiba	Silicon NPN Transistor . Low Leakage Current : IcEV=100nA (Max -)' lBEV=-100nA(Max.) @ V CE=35V, VBE=-0.4V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0-4V(Max.) @ Ic=150mA, lB=15mA . Low Collector Output Capacitance : C b=6.5pF(Max.) @ V CB=5
4	2N4125	Toshiba	Silicon PNP Transistor . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V . Complementary to 2N4123 MAXIMUM RATI
5	2N4399	Toshiba	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min.) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max.) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max.) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max.) @ I C=-10A, I B=-1.0A
6	2N4398	Toshiba	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High C
7	2N4124	Toshiba	Silicon NPN Transistor . Low Leakage Current : ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Complementary to 2N4126 Unit in mm