Busque con el número de pieza junto con el fabricante o la descripción
2N4123 |
Click to view a larger image
| Part Number | 2N4123 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derat. |
| Features |
• Pb−Free Packages are Available * MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Jun. |
| Datasheet |
 2N4123 Data Sheet
PDF 111.87KB |
| Distributor | Stock | Price | Buy |
|---|
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Amplifier |
| Description | 2N4123 Discrete POWER & Signal Technologies [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23.. |
| Features | PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4123 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4123 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless ot. |
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Transistor |
| Description | MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B . |
| Features | omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic A E l Marking: 2N4123 --------- 2N4123 2N4124 --------. |
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | Central Semiconductor |
| Title | SILICON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted. |
| Features | . |
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | 2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . |
| Features | . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance •. |
| Features |
. Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA
. Low Collector Output Capacitance • • Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current V. |
2N4123 |
| Part Number | 2N4123 |
| Manufacturer | Motorola |
| Title | NPN Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipat. |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4124 |
NXP |
NPN general purpose transistor |
|
| 2 | 2N4124 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | 2N4124 |
General Semiconductor |
Small Signal Transistors |
|
| 4 | 2N4124 |
ON Semiconductor |
NPN Transistor |
|
| 5 | 2N4124 |
Micro Commercial Components |
NPN Silicon General Purpose Transistor |
|
| 6 | 2N4124 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2N4124 |
NTE |
Silicon NPN Transistor |
|
| 8 | 2N4124 |
Motorola |
NPN Transistor |
|
| 9 | 2N4124 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 10 | 2N4125 |
Samsung semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|