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2N4125 |
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| Part Number | 2N4125 |
| Manufacturer | Samsung semiconductor |
| Description | . |
| Features | . |
| Datasheet |
 2N4125 Data Sheet
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2N4125 |
| Part Number | 2N4125 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | 2N4125 Discrete POWER & Signal Technologies 2N4125 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum Ratin. |
| Features | eristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4125 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4125 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHA. |
2N4125 |
| Part Number | 2N4125 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | 2N4125 & 2N4126 Silicon PNP Transistor Audio Amplifier, Switch TO92 Type Package Absolute Maximum Ratings: Collector−Emitter 2N4125 . . Voltage, . V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
| Features | . |
2N4125 |
| Part Number | 2N4125 |
| Manufacturer | Motorola |
| Title | AMPLIFIER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon 2N4125 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derat. |
| Features | . |
2N4125 |
| Part Number | 2N4125 |
| Manufacturer | Usha |
| Title | Amplifier transistor |
| Description | Transistors 2N4125 www.DataSheet4U.com . |
| Features | . |
2N4125 |
| Part Number | 2N4125 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA . Low Collector Ou. |
| Features | . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V . Complementary to 2N4123 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Diss. |
2N4125 |
| Part Number | 2N4125 |
| Manufacturer | Central Semiconductor |
| Title | SILICON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted. |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4123 |
ON Semiconductor |
NPN Transistors |
|
| 2 | 2N4123 |
Fairchild Semiconductor |
NPN Amplifier |
|
| 3 | 2N4123 |
Micro Commercial Components |
NPN Transistor |
|
| 4 | 2N4123 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2N4123 |
Motorola |
NPN Transistor |
|
| 6 | 2N4123 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N4123 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 8 | 2N4124 |
NXP |
NPN general purpose transistor |
|
| 9 | 2N4124 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 10 | 2N4124 |
General Semiconductor |
Small Signal Transistors |
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Desde 2024. D4U Semiconductor.
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