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2N4124 |
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| Part Number | 2N4124 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N4124 / MMBT4124 Discrete POWER & Signal Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904 for characteristics. Absolut. |
| Features |
racteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4124 625 5.0 83.3 200
Max
*MMBT4124 350 2.8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IC. |
| Datasheet |
 2N4124 Data Sheet
PDF 93.55KB |
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2N4124 |
| Part Number | 2N4124 |
| Manufacturer | ON Semiconductor |
| Title | NPN Transistor |
| Description | 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Cur. |
| Features |
• Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C . |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | NXP |
| Title | NPN general purpose transistor |
| Description | DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4126. 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current to. |
| Features |
• Low current (max. 200 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification, e.g. small-signal audio-frequency applications. 1 handbook, halfpage 2N4124 PINNING PIN 1 2 3 collector base emitter DESCRIPTION DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4126. 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and sy. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | 2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . |
| Features | . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | General Semiconductor |
| Title | Small Signal Transistors |
| Description | 2N4124 Small Signal Transistors (NPN) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ NPN Silicon Epitaxial Transistor for switching and amplifier applications. ♦ Especially suitable for AF-driver and low-power output stages. ♦ As complementary type, the PNP transistor 2N4126 . |
| Features | ♦ NPN Silicon Epitaxial Transistor for switching and amplifier applications. ♦ Especially suitable for AF-driver and low-power output stages. ♦ As complementary type, the PNP transistor 2N4126 is recommended. max. ∅ .022 (0.55) .098 (2.5) E B C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERIS. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Silicon General Purpose Transistor |
| Description | MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B . |
| Features | omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4123 2N4124 NPN Silicon General Purpose Transistor 625mW l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic A E l Marking: 2N4123 --------- 2N4123 2N4124 --------. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | Motorola |
| Title | NPN Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipat. |
| Features |
)
Collector Cutoff Current (VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
Unit °C/W °C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO ICBO IEBO
1 2 3
CASE 29 –04, STYLE 1 TO –92 (TO –226AA) Min Max Unit Vdc 30 — 25 — Vdc 40 — 30 — 5.0 — Vdc — 50 nAdc — 50 nAdc 2 –. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | t SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4124 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA . Low Collector Output Cap. |
| Features |
. Low Leakage Current
: ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA
. Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V
. Complementary to 2N4126
Unit in mm
H 5 I MAX
1— X <
Q46
C.5 6MAX.
1
J
0.4 5
1 1
,
-1
CD
5
1.27
i.27
10
"I
J
1
X
j'
1
<
s
^i 2 3 /
r~ •J 1. EMITTER 2. BASE 3. COLL. |
2N4124 |
| Part Number | 2N4124 |
| Manufacturer | Central Semiconductor |
| Title | SILICON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted. |
| Features | 40 - BVCEO IC=1.0mA 30 - BVEBO IE=10μA 5.0 - VCE(SAT) IC=50mA, IB=5.0mA - 0.3 VBE(SAT) IC=50mA, IB=5.0mA - 0.95 hFE VCE=1.0V, IC=2.0mA 50 150 hFE VCE=1.0V, IC=50mA 25 - hfe VCE=10V, IC=2.0mA, f=1.0kHz 50 200 fT VCE=20V, IC=10mA, f=100MHz 250 - Cob VCB=5.0V, IE=0, f=100kHz - 4.0 Cib VEB=0.5V, IC=0, f=100kHz - 8.0 NF VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz - 6.. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4123 |
ON Semiconductor |
NPN Transistors |
|
| 2 | 2N4123 |
Fairchild Semiconductor |
NPN Amplifier |
|
| 3 | 2N4123 |
Micro Commercial Components |
NPN Transistor |
|
| 4 | 2N4123 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2N4123 |
Motorola |
NPN Transistor |
|
| 6 | 2N4123 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N4123 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 8 | 2N4125 |
Samsung semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 9 | 2N4125 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 10 | 2N4125 |
NTE |
Silicon PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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