Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Inchange Semiconductor |
| Title | (2N4398 / 2N4399) Silicon PNP Power Transistors |
| Description | ¡¤ With TO-3 package ¡¤ Complement to type 2N5301/5302/5303 ¡¤ Low collector saturation voltage ¡¤ Excellent safe operating area APPLICATIONS ¡¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified outline . |
| Features | /W Datasheet pdf - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 IC=-10A; I. |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Comset Semiconductor |
| Title | (2N4398 / 2N4399) Silicon Power Transistors |
| Description | PNP 2N4398 – 2N4399 – 2N5745 SILICON POWER TRANSISTORS They are PNP transistors mounted in Jedec TO-3 package. They are intended for use in power amplifier and switching circuits applications. Complement to NPN 2N5301 – 2N5302 – 2N5303. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Col. |
| Features |
2N4399 – 2N5745 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Test Condition(s) 2N4398 2N4399 2N5745 VCB = -40 V, IE = 0 2N4398 VCB = -60 V, IE = 0 2N4399 VCB = -80 V, IE = 0 2N5745 2N4398 VCE= -40 V, IB = 0 VCE= -60 V, IB = 0 2N4399 VCE= -80 V, IB = 0 2N5745 2N4398 VEB= -5 V, IC = 0 2N4399 2N5745 VCE= -40 V, VBE= 1.5 V 2N4398 VCE= -40 V, VBE= 1.5 V 2N4399 VC. |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Mospec Semiconductor |
| Title | POWER TRANSISTORS |
| Description | A A A A . |
| Features | . |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Toshiba |
| Title | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage:. |
| Features | . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max.) . Complementary to 2N5301 MAXIMUM RATINGS (Ta=25°C) 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHI. |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Motorola |
| Title | PNP Silicon High-Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon High-Power Transistors . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 • DC Current Gai. |
| Features | . |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | The 2N4398 and 2N4399 are silicon PNP high power transistors in a TO3 type package designed for use in power amplifier and switching circuits. Features: D Low Collector−Emitter Saturation Voltage: IC = 15A, VCE(sat) = 1.0V Max D DC Current Gain Specified: 1.0 o 30A Absolute Maximum Ratings: Coll. |
| Features | D Low Collector−Emitter Saturation Voltage: IC = 15A, VCE(sat) = 1.0V Max D DC Current Gain Specified: 1.0 o 30A Absolute Maximum Ratings: Collector−Emitter 2N4398 . . Voltage, ........ V. .C.E.O. .. ... .. . .. . .. ... .. . .. . .. ... .. . .. . .. ... .. . .. . .. ... .. . .. 40V 2N4399 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
2N4398 |
| Part Number | 2N4398 |
| Manufacturer | Semelab Plc |
| Title | Medium Power PNP Switching Transistor |
| Description | 2N4398 MECHANICAL DATA Dimensions in mm (inches) 4 0 .0 1 (1 .5 7 5 ) M a x . MEDIUM POWER PNP SWITCHING TRANSISTOR FOR SWITCHING APPLICATIONS www.DataSheet4U.com 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 . |
| Features |
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) 2 P ls • SPACE QUALITY LEVELS OPTIONS • JAN LEVEL SCREENING OPTIONS 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 6 .9 7 (0 .6 6 8 ) 1 6 .8 7 (0 .6 6 4 ) APPLICATIONS: The 2N4398 is intended for use in power amplifier and switching circuits. TO-3 (TO-204AA) Underside View Pin 2 – Emitter . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4391 |
Seme LAB |
N-Channel MOSFET |
|
| 2 | 2N4391 |
Calogic LLC |
N-Channel JFET |
|
| 3 | 2N4391 |
Motorola |
Switching JFET |
|
| 4 | 2N4391 |
Vishay |
N-Channel JFETs |
|
| 5 | 2N4391 |
Central Semiconductor |
N-Channel JFET |
|
| 6 | 2N4391 |
InterFET Corporation |
N-Channel JFET |
|
| 7 | 2N4391 |
TT |
SILICON SMALL SIGNAL N-CHANNEL JFET |
|
| 8 | 2N4391 |
Micross |
Single N-Channel JFET |
|
| 9 | 2N4391 |
Solitron Devices |
N-Channel JFET |
|
| 10 | 2N4392 |
Seme LAB |
N-Channel JFET |
|
Desde 2024. D4U Semiconductor.
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