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2N4126 |
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| Part Number | 2N4126 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124. 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency T. |
| Features |
• Low current (max. 200 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification, e.g. small-signal audio-frequency applications. 1 handbook, halfpage 2N4126 PINNING PIN 1 2 3 collector base emitter DESCRIPTION DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124. 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition freque. |
| Datasheet |
 2N4126 Data Sheet
PDF 48.95KB |
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2N4126 |
| Part Number | 2N4126 |
| Manufacturer | Vishay |
| Title | Small Signal Transistor |
| Description | 2N4126 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.181 (4.6) 0.142 (3.6) min.0.492 (12.5) 0.181 (4.6) max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Features • PNP Silicon Epitaxial Transistor for switching and . |
| Features |
• PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor 2N4124 is recommended. Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & The. |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | 2N4126 / MMBT4126 Discrete POWER & Signal Technologies 2N4126 MMBT4126 C E C BE TO-92 SOT-23 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. Sour. |
| Features | aracteristics Symbol PD RθJC RθJA TA= 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 2N4126 / MMBT4126 PNP . |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V . Low Saturation Voltage •' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collecto. |
| Features |
. Low Leakage Current
: IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V
. Low Saturation Voltage •' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ v C B=-5V . Complementary to 2N4124 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -25 Collector-Emitter Voltage Emitter-Base Voltage VCEO -25 VEBO . |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | TAITRON |
| Title | Small Signal Low Noise Transistors |
| Description | • The 2N4126 is PNP silicon epitaxial planar transistors designed for general purpose switching and amplifier applications. Features • Complementary to 2N4124 • High power PT:625mW at 25°C • High DC current Gain hFE:120~360 at Ic=2mA TO-92 Maximum Ratings (T Ambient=25ºC unless noted otherwise) S. |
| Features |
• Complementary to 2N4124 • High power PT:625mW at 25°C • High DC current Gain hFE:120~360 at Ic=2mA TO-92 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N4126 VCEO Collector-Emitter Voltage -25 VCBO Collector-Base Voltage -25 VEBO Emitter-Base Voltage -4.0 IC Collector Current Continuous -200 PD Power Dissipation at TA=25°C 625 TJ Junction Temperatu. |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | Samsung semiconductor |
| Title | PNP EPITAXIAL SILICON TRANSISTOR |
| Description | . |
| Features | . |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | 2N4125 & 2N4126 Silicon PNP Transistor Audio Amplifier, Switch TO92 Type Package Absolute Maximum Ratings: Collector−Emitter 2N4125 . . Voltage, . V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
| Features | . |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | General Semiconductor |
| Title | Small Signal Transistors |
| Description | 2N4126 Small Signal Transistors (PNP) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ PNP Silicon Epitaxial Transistor for switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages. ♦ As complementary type, the NPN transistor 2N4124 is . |
| Features | ♦ PNP Silicon Epitaxial Transistor for switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages. ♦ As complementary type, the NPN transistor 2N4124 is recommended. max. ∅ .022 (0.55) .098 (2.5) E B C MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC. |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | SeCoS |
| Title | PNP Plastic Encapsulated Transistor |
| Description | Elektronische Bauelemente 2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Collector Base. |
| Features |
PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Collector Base Emitter J AD B K E CF TO-92 Emitter Base Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless . |
2N4126 |
| Part Number | 2N4126 |
| Manufacturer | Motorola |
| Title | AMPLIFIER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon Order this document by 2N4125/D 2N4125 2N4126 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4125 2N4126 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4123 |
ON Semiconductor |
NPN Transistors |
|
| 2 | 2N4123 |
Fairchild Semiconductor |
NPN Amplifier |
|
| 3 | 2N4123 |
Micro Commercial Components |
NPN Transistor |
|
| 4 | 2N4123 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2N4123 |
Motorola |
NPN Transistor |
|
| 6 | 2N4123 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N4123 |
Central Semiconductor |
SILICON TRANSISTORS |
|
| 8 | 2N4124 |
NXP |
NPN general purpose transistor |
|
| 9 | 2N4124 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
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| 10 | 2N4124 |
General Semiconductor |
Small Signal Transistors |
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Desde 2024. D4U Semiconductor.
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