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2N4126 |
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| Part Number | 2N4126 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max... |
| Features |
. Low Leakage Current
: IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V
. Low Saturation Voltage •' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ v C B=-5V . Complementary to 2N4124 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -25 Collector-Emitter Voltage Emitter-Base Voltage VCEO -25 VEBO -4 Collector Current ic -200 Base Current IB -50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.8 Collector Power Dissipation 1.0 (Tc=25°C) Derate Linearly 25°C PC ... |
| Document |
 2N4126 Data Sheet
PDF 55.09KB |
Desde 2024. D4U Semiconductor.
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