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SeCoS |
NPN Transistor General Purpose Switching and Amplification. CLASSIFICATION OF hFE Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G Range 40~80 70~140 120~240 200~400 TO-92 GH J AD B K E CF Emitter Base Collector REF. A B C D E F G H J K Millimeter |
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SeCoS |
NPN Transistor . Power Dissipation PCM: 0.2 W ( Ta = 25 к ) A B C A L 3 1 3 . Collector Current ICM: 0.15 A D G H B S 2 . Collector-Base Voltage V(BR)CBO: 60 V 1 2 Top View J K L S V G C D H K J 1.BASE 2.EMITTER 3.COLLECTOR V All Dimension in mm ƔABSOLU |
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SeCoS |
NPN Transistor High Breakdown Voltage High Transition Frequency TO-92MOD AD B K EF C Collector 2 3 Base 1 Emitter N GH 1 Emitter 2 Collector M 3 Base LJ REF. A B C D E F G Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1. |
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SeCoS |
NPN Plastic Encapsulated Transistor High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 |
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SeCoS |
NPN Transistor TO-92MOD A D Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) High speed switching time：tstg=1μs(Typ.) Complementary to 2SA1020 K E B CLASSIFICATION OF hFE (1) Product-Rank Range 2SC2655-O 70-140 2SC2655-Y 120-240 F C N G H M Emitter |
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SeCoS |
NPN Transistor Low frequency amplifier Complementary pair with 2SA673 and 2SA673A CLASSIFICATION OF hFE(1) Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D Range 60~120 100~200 160~320 TO-92 GH J AD B K E CF 1Emitte |
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SeCoS |
NPN Silicon Plastic-Encapsulate Transistor n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) V G n n C D H K J All Dimension in mm MAXIMUM RATINGS* T |
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SeCoS |
NPN Transistor Low frequency amplifier Complementary pair with 2SA673 and 2SA673A CLASSIFICATION OF hFE(1) Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Product-Rank 2SC1213A-B 2SC1213A-C 2SC1213A-D Range 60~120 100~200 160~320 TO-92 GH J AD B K E CF 1Emitte |
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SeCoS |
NPN Transistor High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Complementary to 2SA1586 SOT-323 A L 3 Top View CB 12 KE 3 1 2 CLASSIFICATION OF hFE Product-Rank 2SC4116-O Range 70~140 Marking LO 2SC4116-Y 2SC4116-GR |
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SeCoS |
NPN Silicon General Purpose Transistor n A L 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 Low Cob. Cob=2.0pF Compements the 2SA1037K RoHS Compliant Product S n n n 2 B 1 B C D STRUCTURE G n n |
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Secos |
2SC1984L Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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Secos |
NPN Silicon Transistor Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. CLASSIFICATION OF hFE(1) Product-Rank 2SC1383L-Q 2SC1383L-R 2SC1383L-S Product-Rank 2SC1384L-Q 2SC1384L-R 2SC1384L-S Range 85~170 120~240 170~340 |
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SeCoS Halbleitertechnologie GmbH |
(2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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SeCoS |
NPN Transistor High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. High Voltage:VCEO=50V. SOT-23 A L 3 Top View C B CLASSIFICATION OF hFE 12 Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B K E 1 Range Marking Code 90~180 L4 135~270 L5 200~400 L6 |
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SeCoS |
NPN Transistor 1 Base n 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power Dissipation o PCM: 200 mW ( Tamb= 25 C) RoHS Compliant Product 3 |
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SeCoS |
NPN Transistor SOT-323 A 3 3 Low Collector Capacitance. High Gain. L CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4098-N 56~120 AN 2SC4098-P 82~180 AP 2SC4098-Q 120~270 AQ K Top View 1 2 C B 1 2 E D F G H J REF. PACKAGE INFORMATION Package S |
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SeCoS |
NPN Transistor Excellent hFE Linearity Low Noise CLASSIFICATION OF hFE Product-Rank 2SC5343-O Range 70~140 2SC5343-Y 120~240 2SC5343-G 200~400 2SC5343-L 300~700 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View C B 1 |
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Secos |
NPN Transistor Amplifier dissipation NPN Silicon TO-92 G H Base Emitter Collector D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector |
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SeCoS |
NPN Transistor General purpose switching and amplification. CLASSIFICATION OF hFE Product-Rank 2SC1923-O Range 70~140 2SC1923-Y 100~200 MARKING hFE Rank hFE Rank C1923 O 031 C1923 Y 031 TO-92 AD B E CF GH Emitter Collector J Base REF. A B C D E Mill |
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SeCoS |
2SC3052 1.BASE 2.EMITTER n Excellent linearity of DC forward current gain n RoHS Compliant Product n Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) D A L 3 Top View 12 BS VG C H K J SOT-23 Dim Min Max A 2.800 |
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Desde 2024. D4U Semiconductor.
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