Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features ,hFE 。 High gain, good hFE linearity. / Applications 。 TV final picture IF amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Collector PIN 2：Emitter PIN 3：Base / hFE Classifications & Marking 。Se. |
| Features | ,hFE 。 High gain, good hFE linearity. / Applications 。 TV final picture IF amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Collector PIN 2：Emitter PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC2216 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Volta. |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | LGE |
| Title | NPN Transistor |
| Description | 1. BASE 2. EMITTER 3. COLLECTOR 2SC2216(NPN) TO-92 Bipolar Transistors TO-92 Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol. |
| Features | Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature 50 45 4 50 300 125 -55-125 V V V mA mW ℃ ℃ Dimensions in inches and (millimeters) ELEC. |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | ETC |
| Title | NPN Transistor |
| Description | Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com . |
| Features | . |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | Cnelectr |
| Title | NPN Transistor |
| Description | Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Enc. |
| Features |
• • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) C. |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | Secos |
| Title | NPN Transistor |
| Description | 2SC2216 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05 A , 50 V NPN Plastic Encapsulated Transistor FEATURES Amplifier dissipation NPN Silicon TO-92 G H Base Emitter Collector D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.3. |
| Features |
Amplifier dissipation NPN Silicon TO-92 G H Base Emitter Collector D J A B K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. A B C D E F G H J K E C F Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emi. |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics 2SC2216 Collector-base voltage 2SC2717 Coll. |
| Features | Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE VCE = 12.5 V, IC = 12.5 mA VCE (sat) VBE (sat) Cob Cc･rbb’ fT Gpe IC = 15 mA, IB = 1.5 mA IC = 15 mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 30 MHz VCB = 10 V, IE = -1 mA, f = 30 MHz VCE = 12.5 V, IC = 12.5 mA VCC . |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | WEJ |
| Title | NPN Transistor |
| Description | RoHS 2SC2216 2SC2216 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Par. |
| Features | Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test Collecto. |
2SC2216 |
| Part Number | 2SC2216 |
| Manufacturer | FOSHAN BLUE ROCKET |
| Title | SILICON NPN TRANSISTOR |
| Description | 2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55～150 V V V mA mA mW ℃ ℃ /. |
| Features | High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55～150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VC. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2210 |
Sanyo Semicon Device |
NPN Transistor |
|
| 2 | 2SC2210 |
Sanyo Semiconductor |
NPN Epitaxial Planar Silicon Transistor |
|
| 3 | 2SC2215 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 4 | 2SC2216M |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | 2SC2200 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC2204 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC2206 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC2209 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC2209 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC2209 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|