2SC2216 |
Part Number | 2SC2216 |
Manufacturer | WEJ |
Description | RoHS 2SC2216 2SC2216 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temp... |
Features |
Power dissipation
TRANSISTOR (NPN) TO—92
PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. BASE
2. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
unless otherwise specified)
Test
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Bass-emitter saturation voltage Trans... |
Document |
2SC2216 Data Sheet
PDF 127.78KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2210 |
Sanyo Semicon Device |
NPN Transistor | |
2 | 2SC2210 |
Sanyo Semiconductor |
NPN Epitaxial Planar Silicon Transistor | |
3 | 2SC2215 |
Toshiba |
SILICON NPN TRANSISTOR | |
4 | 2SC2216 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | 2SC2216 |
LGE |
NPN Transistor | |
6 | 2SC2216 |
Cnelectr |
NPN Transistor |