Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | SEMTECH |
| Title | NPN Transistor |
| Description | ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package We. |
| Features | A, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO Min. 100 160 35 0.5 30 G S P FORM A IS AVAILABLE Typ. 120 13 - Max. 200 320 0.1 0.1 0.5 0.8 - Unit µA µA V MHz V pF V SEMTECH ELECTRONICS LTD. (Subsidiar. |
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | Toshiba Semiconductor |
| Title | TRANSISTOR |
| Description | 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitt. |
| Features | IC = 500 mA, IB = 20 mA VBE VCE = 1 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit 0.1 µA 0.1 µA 30 V 100 320 35 0.5 V 0.5 0.8 V 120 MHz 13 pF 1 2005-08-02 2222SC2120 2 2005-08-02 3332SC212. |
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | JIANGSU CHANGJIANG |
| Title | NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj . |
| Features |
z High DC Current Gain z Complementary to 2SA950
TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value . |
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Transistor |
| Description | ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO. |
| Features | = 1V ICBO Emitter Cutoff Current VCB= 35V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC= 0 hFE(1) DC Current Gain IC= 0.1A ; VCE= 1V hFE(2) DC Current Gain IC= 0.7A ; VCE= 1V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 5V; f= 100MHz Cob Collector Output Capacitance VCB=10V; IE=0; f=1MHz MIN TYP. MAX UNIT 30 V 0.5 V 0.5 0.8 V 0.1 μA 0.1 μA 100 320 35 120 MHz. |
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | Dc Components |
| Title | NPN Transistor |
| Description | Designed for audio frequency amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature. |
| Features | e BVCEO 30 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 45 100 hFE3 40 Transition Frequency fT - Output Capacitance Cob - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ - 0.28 0.98 120 13 Max 0.. |
2SC2120 |
| Part Number | 2SC2120 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features hFE,, 1W , 2SA950 。 High hFE,1 watts amplifier applications, complementary pair with 2SA950. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Coll. |
| Features | hFE,, 1W , 2SA950 。 High hFE,1 watts amplifier applications, complementary pair with 2SA950. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 100~200 Y 160~320 http://www.fsbrec.com 1/6 2SC2120 Rev.E Mar.-2016 / Absolu. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2122 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2122 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2123 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2123 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2101 |
Toshiba |
Silicon NPN POWER TRANSISTOR |
|
| 6 | 2SC2101 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 7 | 2SC2102 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 8 | 2SC2103A |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 9 | 2SC2104 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SC2105 |
Toshiba |
SILICON NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|