2SC2120 |
Part Number | 2SC2120 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Compleme... |
Features |
IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
0.1 µA
0.1 µA
30
V
100 320
35 0.5 V 0.5 0.8 V 120 MHz 13 pF
1 2005-08-02
2222SC2120
2 2005-08-02
3332SC2120
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fa... |
Document |
2SC2120 Data Sheet
PDF 71.84KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2120 |
JIANGSU CHANGJIANG |
NPN Transistor | |
2 | 2SC2120 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
3 | 2SC2120 |
INCHANGE |
Silicon NPN Transistor | |
4 | 2SC2120 |
Dc Components |
NPN Transistor | |
5 | 2SC2120 |
SEMTECH |
NPN Transistor | |
6 | 2SC2120 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |