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2SC2120 |
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| Part Number | 2SC2120 |
| Manufacturer | INCHANGE |
| Description | ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier ... |
| Features |
= 1V
ICBO
Emitter Cutoff Current
VCB= 35V; IE= 0
IEBO
Collector Cutoff Current
VEB= 5V; IC= 0
hFE(1)
DC Current Gain
IC= 0.1A ; VCE= 1V
hFE(2)
DC Current Gain
IC= 0.7A ; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 5V; f= 100MHz
Cob
Collector Output Capacitance
VCB=10V; IE=0; f=1MHz
MIN TYP. MAX UNIT
30
V
0.5
V
0.5
0.8
V
0.1 μA
0.1 μA
100
320
35
120
MHz
13
pF
hFE(1) Classifications O Y 100-200 160-320 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe... |
| Document |
 2SC2120 Data Sheet
PDF 190.74KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2120 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SC2120 |
JIANGSU CHANGJIANG |
NPN Transistor |
|
| 3 | 2SC2120 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 4 | 2SC2120 |
Dc Components |
NPN Transistor |
|
| 5 | 2SC2120 |
SEMTECH |
NPN Transistor |
|
| 6 | 2SC2120 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
Desde 2024. D4U Semiconductor.
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