Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3052 |
| Part Number | 2SC3052 |
| Manufacturer | SeCoS |
| Title | NPN Silicon Plastic-Encapsulate Transistor |
| Description | 2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L . |
| Features | n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) V G n n C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col. |
2SC3052 |
| Part Number | 2SC3052 |
| Manufacturer | Jiangsu Changjiang |
| Title | TRANSISTOR |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and. |
| Features | Power dissipation PCM: 0.15 W (Tamb=25℃) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Coll. |
2SC3052 |
| Part Number | 2SC3052 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | 2SC3052 TRANSISTOR (NPN) FEATURES z SOT-23 z Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parame. |
| Features | z SOT-23 z Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation J. |
2SC3052 |
| Part Number | 2SC3052 |
| Manufacturer | GME |
| Title | Silicon Epitaxial Planar Transistor |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES Low collector to emitter saturation voltage. Excellent linearity of DC forward current gain. Super mini package for easy mounting. Pb Lead-free 2SC3052 APPLICATIONS For hybrid IC,small type machine low frequency volta. |
| Features |
Low collector to emitter saturation voltage. Excellent linearity of DC forward current gain. Super mini package for easy mounting. Pb Lead-free 2SC3052 APPLICATIONS For hybrid IC,small type machine low frequency voltage amplify application. SOT-23 ORDERING INFORMATION Type No. Marking 2SC3052 LE/LF/LG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol. |
2SC3052 |
| Part Number | 2SC3052 |
| Manufacturer | Rectron |
| Title | BIPOLAR TRANSISTORS TRANSISTOR |
| Description | only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron produ. |
| Features | * Power dissipation PCM : 0.15 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 EM. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3051 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SC3052-T150 |
Isahaya Electronics |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
|
| 3 | 2SC3053 |
Isahaya Electronics |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC3055 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3055 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3058 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3058 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3058A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC3058A |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|