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| Distributor | Stock | Price | Buy |
|---|
2SC3058A |
| Part Number | 2SC3058A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 450V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) ≤ 1 V@ IC = 4A ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For switching regulator . |
| Features | PN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1 mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 4A VBE(sat) Base-Emitter Saturation Voltage IC=. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3058 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC3058 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3051 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3052 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC3052 |
Jiangsu Changjiang |
TRANSISTOR |
|
| 6 | 2SC3052 |
Kexin |
NPN Transistor |
|
| 7 | 2SC3052 |
SeCoS |
NPN Silicon Plastic-Encapsulate Transistor |
|
| 8 | 2SC3052 |
Rectron |
BIPOLAR TRANSISTORS TRANSISTOR |
|
| 9 | 2SC3052 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 10 | 2SC3052-T150 |
Isahaya Electronics |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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