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2SC3058A |
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| Part Number | 2SC3058A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 450V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) ≤ 1 V@ IC = 4A ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot var... |
| Features |
PN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1 mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A; IB= 4A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 1A; VCE= 5V
hFE -2
DC Current Gain
IC= 20A; VCE= 5V
fT
C... |
| Document |
 2SC3058A Data Sheet
PDF 206.47KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3058 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC3058 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3058A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC3051 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC3052 |
GME |
Silicon Epitaxial Planar Transistor |
|
| 6 | 2SC3052 |
Jiangsu Changjiang |
TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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