2SC2229 Datasheet. existencias, precio

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2SC2229 NPN Transistor

2SC2229


2SC2229
Part Number 2SC2229
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2SC2229

Toshiba Semiconductor
2SC2229
Part Number 2SC2229
Manufacturer Toshiba Semiconductor
Title NPN Transistor
Description 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 150 V (min) • Low output capacitance: Cob = 5.0 pF.
Features y even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Ele.

2SC2229

INCHANGE
2SC2229
Part Number 2SC2229
Manufacturer INCHANGE
Title NPN Transistor
Description ·High breakdown voltage ·Low output capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications ·Driver stage audio amplifier applications ·Black and white TV video output applications ABSO.
Features ector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 200V; IE= 0 hFE DC Current Gain IC= 10mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 30V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz MIN TYP. MAX UNIT 0.5 V 1.0 V 0.1 μA 70 240 120 MHz 5 pF NOTICE: ISC re.

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