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2SC2229 |
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| Part Number | 2SC2229 |
| Manufacturer | INCHANGE |
| Description | ·High breakdown voltage ·Low output capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applica... |
| Features |
ector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA ; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
hFE
DC Current Gain
IC= 10mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 30V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
MIN TYP. MAX UNIT
0.5
V
1.0
V
0.1 μA
70
240
120
MHz
5
pF
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc... |
| Document |
 2SC2229 Data Sheet
PDF 171.72KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2220 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC2221 |
ETC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 3 | 2SC2222H |
Pan Jit International |
NPN General Purpose Switching Transistor |
|
| 4 | 2SC2223 |
NEC |
NPN Transistor |
|
| 5 | 2SC2223 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 6 | 2SC2229 |
Toshiba Semiconductor |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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