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| Distributor | Stock | Price | Buy |
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2SC4116 |
| Part Number | 2SC4116 |
| Manufacturer | Kexin |
| Title | NPN Transistors |
| Description | SMD Type NPN Transistors 2SC4116 Transistors ■ Features ● High voltage and high current ● High hFE: hFE = 70~700 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Small package ● Complementary to 2SA1586 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltag. |
| Features |
● High voltage and high current ● High hFE: hFE = 70~700 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Small package ● Complementary to 2SA1586 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Tempe. |
2SC4116 |
| Part Number | 2SC4116 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN Transistor |
| Description | Bipolar Transistors Silicon NPN Epitaxial Type 2SC4116 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector c. |
| Features | (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SA1586 (8) Small package 3. Packaging 2SC4116 USM 1: Base 2: Emitter 3: Collecto. |
2SC4116 |
| Part Number | 2SC4116 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·With SOT-323 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO . |
| Features | 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A VBE(sat) Base-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2mA ; VCE= 6V 2SC4116 MIN TYP. MAX UNIT 60 V 50 V 5 V 0.25 V 0.25 V 0.1 μA 0.1 μA 70 700 Classification of hFE Rank Range O 70-1. |
2SC4116 |
| Part Number | 2SC4116 |
| Manufacturer | GME |
| Title | Transistor |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. High voltage and current. Complementary to 2SA1586. Small package. Pb Lead-free 2SC4116 APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Switching and amplification. ORDERING INFORMA. |
| Features |
Excellent hFE linearity. High voltage and current. Complementary to 2SA1586. Small package. Pb Lead-free 2SC4116 APPLICATIONS NPN Silicon Epitaxial Planar Transistor. Switching and amplification. ORDERING INFORMATION Type No. Marking 2SC4116 LO/LY/LG/LL SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4110 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC4110 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC4110B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC4111 |
Panasonic |
Power Transistors |
|
| 6 | 2SC4111 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC4111 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC4112 |
ETC |
Transistor |
|
| 9 | 2SC4113 |
Sanyo |
Silicon Transistor |
|
| 10 | 2SC4115 |
GME |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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