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2SC4116 |
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| Part Number | 2SC4116 |
| Manufacturer | INCHANGE |
| Description | ·With SOT-323 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·P... |
| Features |
0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.1A; IB= 0.01A
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2mA ; VCE= 6V
2SC4116
MIN TYP. MAX UNIT
60
V
50
V
5
V
0.25 V
0.25 V
0.1 μA
0.1 μA
70
700
Classification of hFE
Rank Range
O 70-140
Y 120-240
GR 200-400
BL 350-700
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is present... |
| Document |
 2SC4116 Data Sheet
PDF 208.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4110 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4110 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC4110 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC4110B |
NELL SEMICONDUCTOR |
Silicon NPN Transistor |
|
| 5 | 2SC4111 |
Panasonic |
Power Transistors |
|
| 6 | 2SC4111 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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