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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabric |
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Samsung semiconductor |
16Mb(1M x 16 bit) Low Power SRAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-FBGA - 6.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6C families are fabri |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 1.65~1.95V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-FBGA-6.00 x 7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F1616 |
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Samsung semiconductor |
CMOS SRAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-TBGA-7.50x9.50 GENERAL DESCRIPTION The K6F1616R6A families are fabricated by SA |
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Samsung semiconductor |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM • • • • • • GENERAL DESCRIPTION The K6F1008V2C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and have various package types for user flexibility of system design. The fa |
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Samsung semiconductor |
CMOS SRAM • Process Technology: Full CMOS • Organization: 128K x16 bit • Power Supply Voltage: 3.0~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state output status and TTL Compati |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B fa |
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Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 3.0 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF) CMOS SRAM GENERAL DESCRIPTION The K6F2008V |
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Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabric |
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Samsung semiconductor |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three state output • Package Type: 48-TBGA-9.00x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6M families are fabrica |
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Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 2.7 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION Th |
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Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • • • • • • Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for |
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Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • • • • • • CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexib |
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Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 512K x8 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48(36)-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4008U2G families are fabricat |
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Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply Voltage: 1.65~1.95V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4016R4G families are fabricate |
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Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM • Process Technology: Full CMOS • Organization: 256K x16 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4016U4G families are fabricated |
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Samsung semiconductor |
CMOS SRAM • Process Technology: Full CMOS • Organization: 64K x16 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three state output status and TTL Compatible • Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Opera |
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Desde 2024. D4U Semiconductor.
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