K6F3216T6M-F |
Part Number | K6F3216T6M-F |
Manufacturer | Samsung semiconductor |
Title | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Features |
• Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process techn... |
Document |
K6F3216T6M-F Data Sheet
PDF 167.24KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K6F3216T6M |
Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F3216U6M |
Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
3 | K6F1008R2M |
Samsung Electronics |
SRAM | |
4 | K6F1008S2M |
Samsung Electronics |
SRAM | |
5 | K6F1008V2C |
Samsung semiconductor |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM | |
6 | K6F1008V2M |
Samsung Electronics |
SRAM |