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K6F4008U2G |
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| Part Number | K6F4008U2G |
| Manufacturer | Samsung semiconductor |
| Title | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| Features |
• Process Technology: Full CMOS • Organization: 512K x8 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48(36)-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4008U2G families are fabricated by SAMSUNG′s advanced full CMOS process technol... |
| Document |
 K6F4008U2G Data Sheet
PDF 152.73KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K6F4008U2E |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F4008R2C |
Samsung semiconductor |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F4016R4G |
SAMSUNG Electronics |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 6 | K6F4016R4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
Desde 2024. D4U Semiconductor.
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