Busque con el número de pieza junto con el fabricante o la descripción
K6F2016V4D |
Click to view a larger image
| Part Number | K6F2016V4D |
| Manufacturer | Samsung semiconductor |
| Title | CMOS SRAM |
| Features |
• Process Technology: Full CMOS • Organization: 128K x16 bit • Power Supply Voltage: 3.0~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state output status and TTL Compati... |
| Document |
 K6F2016V4D Data Sheet
PDF 105.57KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K6F2016U4E |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F2016U4E-F |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F2016U4G |
Samsung semiconductor |
2Mb(128K x 16 bit) Low Power SRAM |
|
| 4 | K6F2008T2E |
Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 6 | K6F2008U2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
Desde 2024. D4U Semiconductor.
|