K6F1616U6M |
Part Number | K6F1616U6M |
Manufacturer | Samsung semiconductor |
Title | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Features |
• Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.5V(Min) • Three state output • Package Type: 48-TBGA-9.00x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process techno... |
Document |
K6F1616U6M Data Sheet
PDF 156.62KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K6F1616U6A |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F1616U6C |
Samsung semiconductor |
16Mb(1M x 16 bit) Low Power SRAM | |
3 | K6F1616R6A |
Samsung semiconductor |
CMOS SRAM | |
4 | K6F1616R6C |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
5 | K6F1616T6B |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
6 | K6F1616T6B-EF55 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |