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K6F2008T2E |
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| Part Number | K6F2008T2E |
| Manufacturer | Samsung semiconductor |
| Title | 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| Features |
• Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 2.7 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F2008T2E families are fabricated by SAMSUNG′s ... |
| Document |
 K6F2008T2E Data Sheet
PDF 128.30KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F2008U2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 6 | K6F2008V2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
Desde 2024. D4U Semiconductor.
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