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STMicroelectronics |
HD decoder ■ Three integrated cable receiver / demodulators ■ DOCSIS/EuroDOCSIS 2.0 cable modem with support for DOCSIS 3.0 down-stream channelbonding ■ SCTE-55 part 1 and 2 physical layer support for CableCARDTM ■ Dual Core architecture providing more than 160 |
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STMicroelectronics |
Low-cost interactive set-top box decoder ■ Enhanced ST20 32-bit VL-RISC CPU memory interface – up to166 MHz,16-bit wide SDR/DDR SDRAM interface Programmable flash memory interface Programmable transport interface (PTI) – single transport stream input – support for DVB transport streams MPE |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is |
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STMicroelectronics |
High-performance set-top box decoder ■ ST231 VLIW host CPU – 333 MHz, 32 Kbyte ICache, 32 Kbyte DCache – up to 1.333 GOPs at 333 MHz – dynamic memory management through MMU ■ ■ ■ ■ PAL/NTSC/SECAM encoder – RGB, CVBS, Y/C and YUV outputs with 10-bit DACs – encoding of CGMS, Teletext, WS |
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STMicroelectronics |
N-channel Power MOSFET TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistan |
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STMicroelectronics |
Low-cost SDTV set-top box decoder ■ The STi5200 is a single-chip, standarddefinition STB decoder including: – ST40 CPU core, 266 MHz – dual ST231 CPU cores for audio and video decoding, both 400 MHz – transport filtering and descrambling – video decoder: H.264/AVC and MPEG-2 – grap |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes STI150N10F7 STP150N10F7 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Swi |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB ) Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche test |
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STMicroelectronics |
N-channel Power MOSFET TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$% - Obsole* roduct(s)6 $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W • 100% avalanche tested • Low input capacitance |
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STMicroelectronics |
N-Channel Power MOSFET TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB) • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Hig |
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STMicroelectronics |
Single-chip worldwide iDTV processor ■ ■ ■ ■ ■ ■ ■ 32-Bit RISC ST40 CPU, 266 MHz, 480 MIPs DDR2 unified memory interface, 250 MHz clock Transport stream demultiplexer with DES, DVB and Multi2 descrambler CableCard and DVB-CI interface MP@ML and MP@HL MPEG2 video decoder 24-bit audio D |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P ■ 100% avalanche tested te ■ Low input capacitanc |
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STMicroelectronics |
N-CHANNEL Power MOSFET 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance I |
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STMicroelectronics |
N-channel Power MOSFET Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic |
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STMicroelectronics |
500V MOSFET IPM 2 A, 500 V, RDS(on) = 1.7 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving Optimized for low electromagnetic interference 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pulldown/pull-up resistors U |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 TBD 150 -65 to +150 Unit V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction - |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 |
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STMicroelectronics |
N-channel Power MOSFET Type www.DataSheet4U.com VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limite |
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STMicroelectronics |
N-channel Power MOSFET Type STB60N55F3 STD60N55F3 STF60N55F3 STI60N55F3 STP60N55F3 STU60N55F3 ■ ■ VDSS 55V 55V 55V 55V 55V 55V RDS(on) <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ ID 80A 80A 42A 80A 80A 80A Pw 110W 1 3 2 3 1 3 2 1 110W 30W 110W 110W 110W DPAK TO-220F |
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Desde 2024. D4U Semiconductor.
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