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STI12NM50N |
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| Part Number | STI12NM50N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield... |
| Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB12NM50N
t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N
550 V 550 V 550 V 550 V 550 V
0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω
11 A 11 A 11 A 11 A (1) 11 A
P ■ 100% avalanche tested te ■ Low input capacitance and gate charge le ■ Low gate input resistance bsoApplication - O ■ Switching applications t(s)Description ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance... |
| Document |
 STI12NM50N Data Sheet
PDF 559.47KB |
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Desde 2024. D4U Semiconductor.
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