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STI150N10F7 |
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| Part Number | STI150N10F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate char... |
| Features |
Order codes STI150N10F7 STP150N10F7
VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% * Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Or... |
| Document |
 STI150N10F7 Data Sheet
PDF 802.41KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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