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STI10NM60N |
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| Part Number | STI10NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to y... |
| Features |
TAB
)1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$%
- Obsole* roduct(s)6
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Order code STI10NM60N
VDS
RDS(on)
@TJmax max.
650 V < 0.55 Ω
ID 10 A
PTOT 70 W
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate... |
| Document |
 STI10NM60N Data Sheet
PDF 314.52KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STI10N62K3 |
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| 2 | STI100N10F7 |
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| 3 | STI1010 |
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| 4 | STI11NM60ND |
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| 5 | STI11NM60ND |
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| 6 | STI11NM80 |
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Desde 2024. D4U Semiconductor.
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